LiNbO3 crystals for pockels cells, LiNbO3 crystals for EO applications; MgO:LiNbO3 crystals for Q-switches, LiNbO3 crystals, LiNbO3 crystals for Electrooptic devices, Mg:LiNbO3 crystals for EO Q-switches

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Home >> Products >> Laser Components >> EO crystals and AO crystals >> MgO:LiNbO3 Crystals

MgO:LiNbO3 Crystals for EO applications

● Preferably for Er:YAG-, Ho:YAG-, Tm:YAG laser

● Wavelengths up to 3μm

● Higher damaging threshold than non-doping LiNbO3

● Brewster for laser with low amplification

MgO:LiNbO3 crystals have become one of the most commonly used material for Q-switches and phase modulators for its high EO coefficients, MgO:LiNbO3 has a higher damaging threshold than the non-doping LiNbO3 crystals. With an electric field applied transverse to the direction of light propagation, LiNBO3 cells can be configured to operate at a lower voltage than comparable KD*P cells. LiNbO3 can also be a good choice for infrared wavelengths as long as 3.0 µm. Hangzhou Shalom EO offers the polished, and AR coating and Au-Cr electroded MgO:LiNbO3 crystals used in pockels cells.

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Modules or Types
Specifications
Basic Properties

Specification of MgO:LiNbO3 crystals for pockels cells applications
Crystal materials	MgO(5mol%):LiNbO3 crystals
Size	Customized
Size tolerance	+/-0.1mm
Length tolerance	+/-0.2mm
Surface quality	20/10 S/D
Parallelism	<20 arc seconds
Flatness	< Lambda/10 @633nm
Chamfer	0.1-0.3mmx45°
Chips	<0.15mm
Side surface	Fine ground
Orientation tolerance	< 10 arc minutes
Wavefront distortion	<Lambda/4@633nm
Extinction ratio	>200:1
Coating	AR/AR@1064nm or customized
Damaging threshold	>300mW/cm^2@1064nm 10nS 10Hz pulse
Electrode on side surface	Chrome gold electrode (Cr+Au)

Note: crystals with other special specificaton is available upon request

Example: MgO:LN crystals with bruster angle

Basic Properties
Crystal Structure	Trigonal, space group R3c
Cell Parameters	a = 0.515, c = 13.863, Z = 6
Melting Point	1255±5oC
Curie Point	1140±5oC
Mohs Hardness	5
Density	4.64 g/cm3
Absorption Coefficient	~ 0.1%/cm @ 1064 nm
Solubility	insoluble in H2O
Relative Dielectric Constant	e^T₁₁/e₀: 85 e^T₃₃/e₀: 29.5
Thermal Expansion Coefficients( @ 25oC)	\|\|a, 2.0 x 10^-6/K \|\|c, 2.2 x 10^-6/K
Thermal Conductivity	38 W /m /K @ 25oC

Linear Optical Properties
Transparency Range	420-5200nm
Refractive Indices	ne=2.146, no = 2.220 @ 1300 nm
	ne= 2.156, no = 2.232 @ 1064 nm
	ne= 2.203, no = 2.286 @ 632.8nm
Optical Homogeneity	~ 5 x 10^-5 /cm
Sellmeier Equations (l in mm)	n²o (l) = 4.9048+0.11768/(l² - 0.04750) - 0.027169l²
Sellmeier Equations (l in mm)	n²e (l) = 4.5820+0.099169/(l² - 0.04443) - 0.021950l²

Nonlinear Optical Properties
NLO Coefficients	d33 = 34.4 pm/V
	d31 = d15 = 5.95 pm/V
	d22 = 3.07 pm/V
Efficiency NLO Coefficients	deff =5.7 pm/V or ~14.6 x d36 (KDP) for frequency doubling 1300 nm
	deff =5.3 pm/V or ~13.6 x d₃₆ (KDP) for OPO pumped at 1064 nm
	deff =17.6 pm/V or ~45 x d₃₆ (KDP) for quasi-phase-matched structure
Electro-Optic Coefficients	g^T33 = 32 pm/V, g^S33 = 31 pm/V
	g^T31 = 10 pm/V, g^S31=8.6 pm/V
	g^T22 = 6.8 pm/V, g^S22= 3.4 pm/V
Half-Wave Voltage, DC Electrical field\|\|z, light ^z Electrical field\|\|x or y, light\|\|z	3.03 KV 4.02 KV