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Wafers and Substrates: SAW Wafers and Crystals
« LiNbO3 « LiTaO3 « Quartz « LGS; LN, LT Thin Film and Wafers
« 300-900 nm Lithium Niobate Thin Films(LNOI) « 300-900 nm Lithium Niobate Tantalate Thin Films(LTOI) « 5-50 μm LT, LN, Quartz on Si « Free Standing Ultra Thin & Ultra Flat Wafers « Customized Thin Films; Substrate for HTSC Film Growth
« MgO « SrTiO3 « MgAl2O4 « (La,Sr)(Al,Ta)O3 « LaAlO3 « LaSrAlO4 « KTaO3 « YSZ « YAlO3 « Nd:GaO3; Substrate for Magnetic and Ferroelectricity Film Growth
« MgO « SrTiO3 « (La,Sr)(Al,Ta)O3 « LaAlO3 « TGG « Al2O3 « GGG « Nb：SrTiO3 « TiO2 « Nd:SrTiO3 « Fe:SrTiO3; Substrates for Semiconductor Thin Film Growth
« GaN « ScAlMgO4 « MgAl6O10 « MgO « Al2O3 « LiAlO2 « ZnO « GaAs « Si « InP; Wafers and Substrates for Semiconductor
« SiC « CdZnTe « ZnO « GaAs « Ge « Si

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LSAT (Lanthanum Strontium Aluminum Tantalum Oxide) crystal substrate

LSAT - Lanthanum Strontium Aluminum Tantalum Oxide or (La,Sr)(Al,Ta)O3 is a mixed perovskite crystal substrate for epitaxial thin films in ferroelectric and high temperature superconductor devices.

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Specifications
Basic Properties

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SrTiO3

LaAlO3

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Specifications
Materials	(La,Sr)(Al,Ta)O3 Single crystals
Orientations	<100>, <110>,<111>
Orientation tolerance	±0.5°
Typical size(mm)	10x3，10x5，10x10，15x15，，20x15，20x20， Ф15, ф20.0, ф25.4; ф50.8
Typical thickness(mm)	0.5mm, 1.0mm
Thickness tolerance	±0.05mm
Size tolerance	±0.1mm
Surface roughness	Ra<0.5nm
Surface finish	SSP (single surface polished) or DSP (double surface polished)

Basic Properties
Growth method	Czochralski method
Crystal structure	M3
Unit cell constant	a=3.868 A
Melt point（℃）	1840
Density	6.74（g/cm3）
Hardness	6.5（mohs）
Dielectric constants	22
Thermal expansion	10 x 10^-6 /K

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LSAT (Lanthanum Strontium Aluminum Tantalum Oxide) crystal substrate

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LSAT (Lanthanum Strontium Aluminum Tantalum Oxide) crystal substrate

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