SiC (silicon carbide)Crystals and Substrates

SiC is a semiconductor containing silicon and carbon. Sic (silicon carbide) has thermal conductivity and great energy to penetrate electric field. There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices.  SiC also has a very low coefficient of thermal expansion (4.0 × 10−6/K) and experiences no phase transitions that would cause discontinuities in thermal expansion. The main application area of it are high frequency power electron devices(l Schottky diodes ,MOSFET ,JFET,BJT ,PiN diodes ,IGBT) and optoelectronic devices (it is widely applied in backing material of blue LED). 

Specifications

Size

10x310x510x1015x15,,20x1520x20

dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm

Thickness

0.5mm1.0mm

Polishing

Single or double

Crystal orientation

<001>±0.5º

redirection precision

±0.5°

Redirection the edge:

special in 1°

Angle of crystalline

Special size and orientation are available upon request

Ra:

≤5Å5µm×5µm

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