Shalom

MgAl6O10 is substrate material for GaN and ZnO epitaxial film. Compared with MgAl2O4, MgAl6O10 has less lattice mismatch and thermal expansion mismatch with GaN (the lattice mismatch is -11.5%, thermal expansion mismatch is 2.2×10^-6/℃). With low melt point, MgAl6O10 is more suitable to be the substrate material for bigger size and higher quality crystals. In addition, Experimental results show the GaN and ZnO devices prepared on MgAl6O10 have better light-emitting than on sapphire.