Shalom

ScAlMgO4, a newly developed substrate material for GaN and ZnO heteroepitaxy. So far, with the minimum lattice mismatch, it has the best lattice match with GaN and ZnO and is an ideal substrate material for GaN and ZnO epitaxy. The lattice mismatch of the thermal expansion coefficient at axis with GaN, ZnO epitaxial films is much better than sapphire and silicon.